dsa 50 c 100qb advanced schottky symbol definition r a t i n g s features / advantages: very low vf extremely low switching losses low irm-values improved thermal behaviour high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching low losses typ. max. i fsm i r a ma v 230 i fav a v f 0.90 r thjc 0.95 k/w v r = t vj = 123 min. 25 ms (50 hz), sine applications: rectifiers in switch mode power supplies (smps) free wheeling diode in low voltage converters v rrm v 100 0.5 t vj v c = t vj c = ma c 5 package: part number v r = i f =a v t c =155c p tot 160 w t c c = e as 5mj t vj c = i as =a;l = h i ar a v a = 1 f = 10 khz 1.5v r typ.; t vj 175 c -55 high performance schottky diode low loss and soft recovery common cathode v i v rrm fav f = = = 100 25 0.72 25 t vj =45c 10 100 dsa 50 c 100qb v a v 100 v 100 25 25 t p =10 25 max. repetitive reverse voltage reverse current forward voltage average forward current thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current non-repetitive avalanche energy repetitive avalanche current conditions unit (marking on product) 0.72 t vj c = 25 c j pf j unction capacitance v r = v; f = 1 mhz t vj = c 125 125 i f =a 50 t vj = c 25 v 1.07 i f =a 25 i f =a 50 v 0.90 v f0 v 0.45 t vj = 175 c r f 7.3 ? m to-3p threshold voltage slope resistance for power loss calculation only 25 rectangular, d = 0.5 2x industry standard outline - compatible with to-247 epoxy meets ul 94v-0 rohs compliant ixys reserves the right to change limits, conditions and dimensi ? 2005 ixys all rights reserved 0614 data according to iec 60747and per diode unless otherwise specified
dsa 50 c 100qb advanced i rms a per pin* 50 r thch k/w 0.25 m d nm 1.2 mounting torque 0.8 t stg c 150 storage temperature -55 weight g 5 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit * irms is typically limited by: 1. pin-to-chip resi stance; or by 2. current capability of the chip. in case of 1, a common cathode/anode configuration and a no n-isolated backside, the whole current capability can be used by c onnecting the backside. outlines to-3p f c n 120 mounting force with clip 20 ixys reserves the right to change limits, conditions and dimensi ? 2005 ixys all rights reserved 0614 data according to iec 60747and per diode unless otherwise specified
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